Datasheet > 2N5744

2N5744

更新时间： 2024-11-15 06:18:43

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管
页数	文件大小	规格书
3页	52K
描述
Silicon PNP Power Transistors

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中文翻译

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2N5744 数据手册

Product Specification

www.jmnic.com

Silicon PNP Power Transistors

2N5743 2N5744

DESCRIPTION

·With TO-66 package

·Low collector-emitter saturation voltage

·Fast switching speed

APPLICATIONS

·For general–purpose switching

and power amplifier applications.

PINNING

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-66) and symbo

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

Open emitter

VALUE

UNIT

2N5743

2N5744

2N5743

2N5744

V_CBO

Collector-base voltage

100

V_CEO

Collector-emitter voltage

Open base

100

V_EBO

I_C

Emitter-base voltage

Collector current

Open collector

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C=100℃

℃

150

-65~200

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance junction to case

0.875

℃/W

JMnic

12 3

中文翻译

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