2N4398
2N4399
2N5745
www.centralsemi.com
DESCRIPTION:
PNP SILICON
The CENTRAL SEMICONDUCTOR 2N4398 series
types are PNP silicon power transistors designed for
power amplifier and switching applications.
POWER TRANSISTOR
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
2N4398
40
40
5.0
30
2N4399
60
60
5.0
30
50
7.5
15
200
2N5745
80
80
5.0
20
UNITS
V
V
V
A
A
A
A
W
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Peak Base Current
V
V
V
CBO
CEO
EBO
I
C
I
CM
I
B
I
BM
Power Dissipation
P
P
D
D
Power Dissipation (T =25°C)
5.0
-65 to +200
35
W
A
Operating and Storage Junction Temperature
Thermal Resistance
T , T
°C
°C/W
°C/W
J
stg
JA
JC
Thermal Resistance
0.875
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
C
2N4398
2N4399
MIN MAX
2N5745
MIN MAX
SYMBOL
TEST CONDITIONS
MIN MAX
UNITS
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
V
V
V
V
I
I
I
I
I
I
V
V
V
V
V
V
=Rated V
=Rated V
-
-
-
-
-
-
40
-
-
-
-
-
-
-
-
-
-
-
1.0
5.0
10
-
5.0
5.0
-
0.75
1.0
2.0
-
4.0
1.6
1.85
2.5
-
-
-
-
-
-
-
60
-
-
-
-
-
-
-
-
-
-
-
1.0
5.0
10
-
5.0
5.0
-
0.75
1.0
2.0
-
4.0
1.6
1.85
2.5
-
-
-
-
-
-
-
80
-
-
-
-
-
-
-
-
-
-
-
1.0
5.0
-
10
5.0
5.0
-
1.0
1.5
-
2.0
-
1.7
2.0
-
2.5
1.5
-
CBO
CEX
CEX
CEX
CEO
EBO
CB
CE
CE
CE
CE
EB
CBO
CEO EB
, V =1.5V
=30V, V =1.5V, T =150°C
EB
C
C
=80V, V =1.5V, T =150°C
EB
=Rated V
=5.0V
CEO
BV
I =200mA
CEO
C
V
V
V
V
V
V
V
V
V
V
V
V
V
I =10A, I =1.0A
CE(SAT)
CE(SAT)
CE(SAT)
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
BE(SAT)
BE(SAT)
BE(ON)
BE(ON)
BE(ON)
BE(ON)
C
B
B
B
B
B
B
B
B
I =15A, I =1.5A
C
I =20A, I =2.0A
C
I =20A, I =4.0A
C
I =30A, I =6.0A
C
I =10A, I =1.0A
C
I =15A, I =1.5A
C
I =20A, I =2.0A
C
I =20A, I =4.0A
C
B
V
=2.0V, I =10A
-
-
CE
CE
CE
CE
C
V
V
V
=2.0V, I =15A
1.7
-
3.0
1.7
-
3.0
C
=4.0V, I =20A
-
-
-
-
-
-
2.5
-
C
=4.0V, I =30A
V
C
R0 (30-July 2012)