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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| 2N5539E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 20A I(C), 130V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, |
|
| 2N554 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 3A I(C) | TO-3 |
|
| 2N5540 | ETC |
获取价格 |
COLLECTOR CURRENT = 10 AMPS NPN TYPES |
|
| 2N5540E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, |
|
| 2N5541 | ASI |
获取价格 |
暂无描述 |
|
| 2N5541E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 5A I(C), 130V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, |
|
| 2N5542 | ETC |
获取价格 |
COLLECTOR CURRENT = 10 AMPS NPN TYPES |
|
| 2N5542E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 130V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, |
|
| 2N5545 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, N-Channel, Junction FET, |
|
| 2N5545 | TI |
获取价格 |
2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71, TO-71, 8 PIN |
|
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