生命周期: | Obsolete | 包装说明: | POST/STUD MOUNT, O-MUPM-X3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.43 |
最大集电极电流 (IC): | 20 A | 集电极-发射极最大电压: | 130 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 25 |
JEDEC-95代码: | TO-63 | JESD-30 代码: | O-MUPM-X3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 极性/信道类型: | NPN |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 晶体管元件材料: | SILICON |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N554 | ETC | TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 3A I(C) | TO-3 |
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2N5540 | ETC | COLLECTOR CURRENT = 10 AMPS NPN TYPES |
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2N5540E3 | MICROSEMI | Power Bipolar Transistor, 10A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, |
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2N5541 | ASI | 暂无描述 |
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2N5541E3 | MICROSEMI | Power Bipolar Transistor, 5A I(C), 130V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, |
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2N5542 | ETC | COLLECTOR CURRENT = 10 AMPS NPN TYPES |
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