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2N5542E3 PDF预览

2N5542E3

更新时间: 2024-09-17 19:45:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体管
页数 文件大小 规格书
1页 60K
描述
Power Bipolar Transistor, 10A I(C), 130V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN

2N5542E3 技术参数

生命周期:Obsolete包装说明:POST/STUD MOUNT, O-MUPM-X3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.68
最大集电极电流 (IC):10 A集电极-发射极最大电压:130 V
配置:SINGLE最小直流电流增益 (hFE):30
JEDEC-95代码:TO-61JESD-30 代码:O-MUPM-X3
元件数量:1端子数量:3
封装主体材料:METAL封装形状:ROUND
封装形式:POST/STUD MOUNT极性/信道类型:NPN
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER晶体管元件材料:SILICON
Base Number Matches:1

2N5542E3 数据手册

  

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