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2N5458G PDF预览

2N5458G

更新时间: 2024-10-28 03:56:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号场效应晶体管开关
页数 文件大小 规格书
5页 131K
描述
JFETs − General Purpose N−Channel − Depletion

2N5458G 数据手册

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MMBF5457  
MMBF5458  
MMBF5459  
2N5457  
2N5458  
2N5459  
G
S
TO-92  
G
S
SOT-23  
Mark: 6D / 61S / 6L  
NOTE: Source & Drain  
are interchangeable  
D
D
N-Channel General Purpose Amplifier  
This device is a low level audio amplifier and switching transistors,  
and can be used for analog switching applications. Sourced from  
Process 55.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VDG  
Drain-Gate Voltage  
Gate-Source Voltage  
Forward Gate Current  
25  
- 25  
V
V
VGS  
IGF  
10  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N5457-5459  
*MMBF5457-5459  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
125  
350  
2.8  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
357  
556  
°C/W  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

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