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2N5428A PDF预览

2N5428A

更新时间: 2024-01-11 14:58:09
品牌 Logo 应用领域
SEME-LAB 晶体晶体管开关局域网
页数 文件大小 规格书
2页 22K
描述
MEDIUM POWER NPN SILICON

2N5428A 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-66
包装说明:TO-66, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.15
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):7 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):60
JEDEC-95代码:TO-66JESD-30 代码:O-MBFM-P2
JESD-609代码:e3元件数量:1
端子数量:2封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN (315)端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:10
晶体管元件材料:SILICON标称过渡频率 (fT):30 MHz
Base Number Matches:1

2N5428A 数据手册

 浏览型号2N5428A的Datasheet PDF文件第2页 
2N5428A  
MECHANICAL DATA  
Dimensions in mm  
MEDIUM POWER  
NPN SILICON  
TRANSISTOR  
6.35 (0.250)  
8.64 (0.340)  
3.68  
(0.145) rad.  
max.  
3.61 (0.142)  
3.86 (0.145)  
rad.  
Des igned for s witching and  
wide - band amplifier  
applications  
1.27 (0.050)  
1.91 (0.750)  
4.83 (0.190)  
5.33 (0.210)  
9.14 (0.360)  
min.  
TO66 Package.  
ABSOLUTE MAXIMUM RATINGS (T  
=25°C unless otherwise stated)  
case  
VCEO  
VCB  
VEB  
IC  
Collector - emitter voltage  
Collector - base voltage  
Emitter - base voltage  
80 V  
80 V  
6 V  
Collector current – continuous  
Base current  
7 A  
IB  
1 A  
PD  
Total device dissipation at Tcase= 25°C  
Derate above 25°C  
40 W  
228 mW / °C  
Tj  
Operating and  
-65 to 200°C  
4.37 °C / W  
Tstj  
storage junction temperature range  
Thermal resistance, junction to case.  
R
JC  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim. 7/93  

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