Datasheet > 2N5432-E3

2N5432-E3

更新时间： 2024-02-13 19:47:57

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	70K
描述
Transistor

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2N5432-E3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	FET 技术：	JUNCTION
JESD-609代码：	e3	湿度敏感等级：	1
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.3 W	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

2N5432-E3 数据手册

2N5432/5433/5434

Vishay Siliconix

N-Channel JFETs

PRODUCT SUMMARY

Part Number V_GS(off)(V) r_DS(on)Max (ꢀ ) I_D(off)Typ (pA) t_ONTyp (ns)

2N5432

2N5433

2N5434

–4 to –10

–3 to –9

–1 to –4

2.5

FEATURES

BENEFITS

APPLICATIONS

D Low On-Resistance: 2N5432 <5

D Fast Switching—t_ON: 2.5 ns

D High Off-Isolation—I_D(off): 10 pA

D Low Capacitance: 11 pF

D Low Insertion Loss

ꢀ

D Low Error Voltage

D Analog Switches

D Choppers

D High-Speed Analog Circuit Performance

D Negligible “Off-Error,” Excellent Accuracy

D Good Frequency Response

D Sample-and-Hold

D Normally “On” Switches

D Current Limiters

D Eliminates Additional Buffering

DESCRIPTION

The 2N5432/5433/5434 are suitable for high-performance

analog switching and amplifier applications. Breakdown

voltage characteristics, low on-resistance, and very fast

switching make these devices are ideal for a wide range of

applications.

The hermetically-sealed TO-206AC (TO-52) package is

suitable for processing per MIL-S-19500 (see Military

Information). For similar products in TO-236 (SOT-23) or

TO-226AA (TO-92) packages, see the J/SST108 series data

sheet.

TO-206AC

(TO-52)

G and Case

Top View

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V

Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA

Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW

Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C

Notes

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C

a. Derate 2.4 mW/_C above 25_C

Document Number: 70245

S-04028—Rev. F, 04-Jun-01

www.vishay.com

7-1

12 3 4 5 6

下载PDF

与2N5432-E3相关器件

型号	品牌	描述	获取价格	数据表
2N5433	INTERSIL	N-CHANNEL JFET	获取价格
2N5433	NJSEMI	N-CHANNEL JFET	获取价格
2N5433	VISHAY	N-Channel JFETs	获取价格
2N5433E	VISHAY	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206A	获取价格
2N5433E	TEMIC	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206A	获取价格
2N5433-E3	VISHAY	Transistor	获取价格