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2N5400/D PDF预览

2N5400/D

更新时间: 2024-11-23 23:19:51
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体放大器晶体管
页数 文件大小 规格书
6页 180K
描述
Amplifier Transistor PNP

2N5400/D 数据手册

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Order this document  
by 2N5400/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
*Motorola Preferred Device  
COLLECTOR  
3
2
BASE  
1
EMITTER  
1
2
3
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol 2N5400 2N5401  
Unit  
Vdc  
CASE 29–04, STYLE 1  
TO–92 (TO–226AA)  
V
CEO  
V
CBO  
V
EBO  
120  
130  
150  
160  
Vdc  
5.0  
Vdc  
Collector Current — Continuous  
I
C
600  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
V
Vdc  
(BR)CEO  
(I = 1.0 mAdc, I = 0)  
2N5400  
2N5401  
120  
150  
C
B
CollectorBase Breakdown Voltage  
(I = 100 Adc, I = 0)  
V
Vdc  
Vdc  
(BR)CBO  
2N5400  
2N5401  
130  
160  
C
E
EmitterBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
V
5.0  
(BR)EBO  
E
C
Collector Cutoff Current  
I
CBO  
(V  
CB  
(V  
CB  
(V  
CB  
(V  
CB  
= 100 Vdc, I = 0)  
2N5400  
2N5401  
2N5400  
2N5401  
100  
50  
100  
50  
nAdc  
E
= 120 Vdc, I = 0)  
E
= 100 Vdc, I = 0, T = 100°C)  
µAdc  
E
A
A
= 120 Vdc, I = 0, T = 100°C)  
E
Emitter Cutoff Current  
(V = 3.0 Vdc, I = 0)  
I
50  
nAdc  
EBO  
EB  
C
1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1996  

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