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2N5366

更新时间: 2024-11-24 22:49:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器晶体管
页数 文件大小 规格书
4页 62K
描述
PNP General Purpose Amplifier

2N5366 数据手册

 浏览型号2N5366的Datasheet PDF文件第2页浏览型号2N5366的Datasheet PDF文件第3页浏览型号2N5366的Datasheet PDF文件第4页 
2N5366  
PNP General Purpose Amplifier  
This device is designed for general purpose amplifiers applications at  
collector currents to 300mA.  
Sourced from process 68.  
TO-92  
1. Emitter 2. Collector 3. Base  
1
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
40  
Units  
V
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector current  
CEO  
40  
V
CBO  
EBO  
4.0  
V
I
- Continuous  
500  
mA  
°C  
C
T , T  
Operating and Storage Junction Temperature Range  
-55 ~ +150  
J
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
Min.  
40  
Typ.  
Max. Units  
V
I
I
I
= 10µA  
= 10mA  
V
V
V
CBO  
CEO  
EBO  
CBO  
CES  
EBO  
C
C
C
V
V
40  
= 10µA  
= 40V  
= 40V  
= 4.0V  
4.0  
I
I
I
V
V
V
100  
100  
10  
nA  
nA  
CB  
CB  
EB  
Collector Cut-off Current  
Emitter Cut-off Current  
µA  
h
DC Current Gain  
V
V
V
= 10V, I = 2.0mA  
80  
100  
40  
FE  
CE  
CE  
CE  
C
= 1.0V, I = 50mA  
300  
C
= 5.0V, I = 300mA  
C
V
V
V
(sat)  
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
I
I
= 50mA, I = 2.5mA  
0.25  
1.0  
V
CE  
BE  
BE  
C
C
B
= 300mA, I = 30mA  
B
I
I
= 50mA, I = 2.5mA  
1.1  
2.0  
C
C
B
= 300mA, I = 30mA  
B
Base-Emitter On Voltage  
Output Capacitance  
V
V
V
V
= 10V, I = 2.0mA  
0.5  
80  
0.8  
8.0  
35  
V
CE  
CB  
CB  
CE  
C
C
C
= 10V, f = 1MHz  
= 0.5V, f = 1MHz  
pF  
pF  
ob  
ib  
Input Capacitance  
h
Small-Signal Current Gain  
= 10V, I = 2.0mA, f = 1MHz  
450  
fe  
C
Thermal Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Max.  
Units  
mW  
mW/°C  
°C/W  
P
Total Device Dissipation  
Derate above 25°C  
625  
5.0  
D
R
Thermal Resistance, Junction to Ambient  
200  
θJA  
©2002 Fairchild Semiconductor Corporation  
Rev. A1, July 2002  

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