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2N5366J18Z PDF预览

2N5366J18Z

更新时间: 2024-10-29 06:36:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
3页 25K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN

2N5366J18Z 数据手册

 浏览型号2N5366J18Z的Datasheet PDF文件第2页浏览型号2N5366J18Z的Datasheet PDF文件第3页 
2N5366  
PNP General Purpose Amplifier  
This device is designed for general purpose amplifiers applications at  
collector currents to 300mA.  
Sourced from process 68.  
TO-92  
1. Emitter 2. Collector 3. Base  
1
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
40  
Units  
V
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector current  
CEO  
40  
V
CBO  
EBO  
4.0  
V
I
- Continuous  
500  
mA  
°C  
C
T , T  
Operating and Storage Junction Temperature Range  
-55 ~ +150  
J
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
Min.  
40  
Typ.  
Max. Units  
V
I
I
I
= 10µA  
V
V
V
CBO  
CEO  
EBO  
CBO  
CES  
EBO  
C
C
C
V
V
= 10mA  
40  
= 10µA  
4.0  
I
I
I
V
V
V
= 40V  
= 40V  
= 4.0V  
100  
100  
10  
nA  
nA  
µA  
CB  
CB  
EB  
Collector Cut-off Current  
Emitter Cut-off Current  
h
DC Current Gain  
V
V
V
= 10V, I = 2.0mA  
80  
100  
40  
FE  
CE  
CE  
CE  
C
= 1.0V, I = 50mA  
300  
C
= 5.0V, I = 300mA  
C
V
V
V
(sat)  
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
I
I
= 50mA, I = 2.5mA  
0.25  
1.0  
V
CE  
BE  
BE  
C
C
B
= 300mA, I = 30mA  
B
I
I
= 50mA, I = 2.5mA  
1.1  
2.0  
C
C
B
= 300mA, I = 30mA  
B
Base-Emitter On Voltage  
Output Capacitance  
V
V
V
V
= 10V, I = 2.0mA  
0.5  
80  
0.8  
8.0  
35  
V
CE  
CB  
CB  
CE  
C
C
C
= 10V, f = 1MHz  
= 0.5V, f = 1MHz  
pF  
pF  
ob  
ib  
Input Capacitance  
h
Small-Signal Current Gain  
= 10V, I = 2.0mA, f = 1MHz  
450  
fe  
C
Thermal Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Max.  
Units  
mW  
mW/°C  
P
Total Device Dissipation  
Derate above 25°C  
625  
5.0  
D
R
Thermal Resistance, Junction to Ambient  
200  
°C/W  
θJA  
©2001 Fairchild Semiconductor Corporation  
Rev. A, December 2001  

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SPRINGFIELD, NEW JERSEY 07091