Datasheet > 2N5366J18Z

2N5366J18Z

更新时间： 2024-11-26 06:36:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	25K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN

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2N5366J18Z 数据手册

2N5366

PNP General Purpose Amplifier

•

This device is designed for general purpose amplifiers applications at

collector currents to 300mA.

•

Sourced from process 68.

TO-92

1. Emitter 2. Collector 3. Base

Absolute Maximum Ratings T =25°C unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector current

CEO

CBO

EBO

4.0

- Continuous

500

°C

T , T

Operating and Storage Junction Temperature Range

-55 ~ +150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Test Condition

Min.

Typ.

Max. Units

= 10µA

CBO

CEO

EBO

CBO

CES

EBO

= 10mA

= 10µA

4.0

= 40V

= 4.0V

100

µA

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

= 10V, I = 2.0mA

100

= 1.0V, I = 50mA

300

= 5.0V, I = 300mA

(sat)

(on)

Collector-Emitter Saturation Voltage

= 50mA, I = 2.5mA

0.25

1.0

= 300mA, I = 30mA

= 50mA, I = 2.5mA

1.1

2.0

= 300mA, I = 30mA

Base-Emitter On Voltage

Output Capacitance

= 10V, I = 2.0mA

0.5

0.8

8.0

= 10V, f = 1MHz

= 0.5V, f = 1MHz

Input Capacitance

Small-Signal Current Gain

= 10V, I = 2.0mA, f = 1MHz

450

Thermal Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Max.

Units

mW/°C

Total Device Dissipation

Derate above 25°C

625

5.0

Thermal Resistance, Junction to Ambient

200

°C/W

θJA

Rev. A, December 2001

12 3

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