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2N5367 PDF预览

2N5367

更新时间: 2024-11-24 22:49:23
品牌 Logo 应用领域
MICRO-ELECTRONICS 晶体小信号双极晶体管
页数 文件大小 规格书
1页 47K
描述
PNP SILICON TRANSISTOR

2N5367 技术参数

生命周期:Contact Manufacturer包装说明:CYLINDRICAL, O-PBCY-W3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.15
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):250
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-W3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP最大功率耗散 (Abs):0.62 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

2N5367 数据手册

  

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