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2N5323LEADFREE PDF预览

2N5323LEADFREE

更新时间: 2024-01-25 05:15:44
品牌 Logo 应用领域
CENTRAL 开关晶体管
页数 文件大小 规格书
2页 504K
描述
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN

2N5323LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-39
包装说明:CYLINDRICAL, O-MBCY-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.29最大集电极电流 (IC):2 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-39
JESD-30 代码:O-MBCY-W3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
最大关闭时间(toff):1000 ns最大开启时间(吨):100 ns
Base Number Matches:1

2N5323LEADFREE 数据手册

 浏览型号2N5323LEADFREE的Datasheet PDF文件第2页 
2N5320 2N5321 NPN  
2N5322 2N5323 PNP  
www.centralsemi.com  
COMPLEMENTARY SILICON  
SWITCHING TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2N5320, 2N5322  
series types are complementary silicon power  
transistors manufactured by the epitaxial planar process,  
designed for amplifier and switching applications.  
MARKING: FULL PART NUMBER  
TO-39 CASE  
2N5320  
2N5322  
100  
2N5321  
2N5323  
75  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
C
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
CBO  
V
100  
75  
75  
50  
V
V
CEV  
CEO  
EBO  
V
V
6.0  
5.0  
V
Continuous Collector Current  
Continuous Base Current  
Power Dissipation  
I
2.0  
1.0  
10  
A
C
I
A
B
P
W
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +200  
175  
°C  
°C/W  
°C/W  
J
stg  
Θ
JA  
JC  
Thermal Resistance  
Θ
17.5  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
2N5320  
2N5322  
2N5321  
2N5323  
SYMBOL  
TEST CONDITIONS  
MIN  
-
MAX  
0.5  
MIN  
-
MAX  
-
UNITS  
μA  
I
I
I
I
V
V
V
V
=80V  
=60V  
=5.0V  
=4.0V  
CBO  
CBO  
EBO  
EBO  
CB  
CB  
EB  
EB  
-
-
-
-
5.0  
μA  
μA  
μA  
V
0.1  
-
-
-
-
-
0.5  
BV  
BV  
BV  
I =100μA, V =1.5V  
BE  
100  
75  
6.0  
-
-
75  
50  
5.0  
-
-
CEV  
CEO  
C
I =10mA  
-
-
-
-
V
C
I =100μA  
V
EBO  
E
V
V
V
V
V
I =500mA, I =50mA (2N5320)  
0.5  
-
-
V
CE(SAT)  
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(ON)  
FE  
C
B
I =500mA, I =50mA (2N5321)  
-
-
0.8  
-
V
C
B
I =500mA, I =50mA (2N5322)  
-
0.7  
-
-
V
C
B
I =500mA, I =50mA (2N5323)  
-
-
1.2  
1.4  
250  
-
V
C
B
V
=4.0V, I =500mA  
-
1.1  
150  
-
-
V
CE  
CE  
CE  
CE  
C
h
h
V
V
V
=4.0V, I =500mA  
30  
10  
50  
40  
-
C
=2.0V, I =1.0A  
FE  
C
f
=4.0V, I =50mA, f=10MHz  
-
50  
-
MHz  
T
C
R4 (11-June 2012)  

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