是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.82 |
Is Samacsys: | N | 最大集电极电流 (IC): | 10 A |
集电极-发射极最大电压: | 80 V | 最小直流电流增益 (hFE): | 100 |
JEDEC-95代码: | TO-5 | JESD-30 代码: | O-MBCY-W3 |
JESD-609代码: | e0 | 端子数量: | 3 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5328 | NJSEMI |
获取价格 |
POWER SWITCCHING TRANSISTOR | |
2N5329 | NJSEMI |
获取价格 |
NPN POWER TRANSISTORS | |
2N5329E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 20A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 | |
2N5330 | SSDI |
获取价格 |
30 AMP HIGH SPEED NPN TRANSISTOR 150 VOLTS | |
2N5330 | NJSEMI |
获取价格 |
NPN POWER TRANSISTORS | |
2N5331 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 30A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 | |
2N5332 | TI |
获取价格 |
UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-46 | |
2N5333 | SEME-LAB |
获取价格 |
Bipolar PNP Device | |
2N5333 | CENTRAL |
获取价格 |
Small Signal Transistors | |
2N5333 | NJSEMI |
获取价格 |
P-N-P SILICON POWER TRANSISTOR |