Datasheet > 2N5323PNP

2N5323PNP

更新时间： 2024-02-15 11:55:43

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描述
SILICON POWER SWITCHING TRANSISTORS

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中文翻译

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数据手册

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2N5323PNP 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

SILICON POWER SWITCHING TRANSISTORS

2N5320, 2N5321 NPN

2N5322, 2N5323 PNP

TO-39

Metal Can Package

Medium Power Amplifier and Switching Applications

ABSOLUTE MAXIMUM RATINGS

SYMBOL

2N5322

2N5323

DESCRIPTION

2N5320

2N5321

UNITS

V_CEO

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

Collector Current - Continuous

Base Current

V_CBO

V_EBO

I_C

100

2.0

1.0

I_B

P_D

Power Dissipation@ T_a=25ºC

5.71

57.14

Derate Above 25ºC

Power Dissipation@ T_c=25ºC

Derate Above 25ºC

mW/ ºC

P_D

mW/ ºC

Operating And Storage Junction

Temperature Range

T_j, T_stg

- 65 to +200

ºC

THERMAL CHARACTERISTICS

Junction to Ambient in free air

Junction to Case

R_{th (j-a)}

R_{th (j-c)}

175

17.5

ºC/W

ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)

TEST CONDITION

I_C=100mA, I_B=0

2N5320/5322

DESCRIPTION

Collector Emitter Voltage

SYMBOL

MIN

MAX

UNITS

V_CEO

2N5321/5323

V_CE=70V, V_BE=1.5V, T_c=150ºC

I_CEX

Collector Cut Off Current

2N5320/5322

V_CE=45V, V_BE=1.5V, T_c=150ºC

2N5321/5323

V_CE=100V, V_BE=1.5V

100

2N5320/5322

V_CE=75V, V_BE=1.5V

100

2N5321/5323

V_BE=5V, I_C=0

I_EBO

Emitter Cut Off Current

2N5321/5323

V_BE=7V, I_C=0

100

2N5320/5322

Data Sheet

Page 1 of 4

Continental Device India Limited

12 3 4

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