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2N5210L34Z PDF预览

2N5210L34Z

更新时间: 2024-01-17 20:54:08
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
11页 570K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,

2N5210L34Z 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.61
Is Samacsys:N其他特性:LOW NOISE
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):250
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):30 MHz
Base Number Matches:1

2N5210L34Z 数据手册

 浏览型号2N5210L34Z的Datasheet PDF文件第2页浏览型号2N5210L34Z的Datasheet PDF文件第3页浏览型号2N5210L34Z的Datasheet PDF文件第4页浏览型号2N5210L34Z的Datasheet PDF文件第5页浏览型号2N5210L34Z的Datasheet PDF文件第6页浏览型号2N5210L34Z的Datasheet PDF文件第7页 
2N5210  
TO-92  
C
B
E
NPN General Purpose Amplifier  
This device is designed for low noise, high gain, general purpose  
amplifier applications at collector currents from 1µA to 50 mA.  
Absolute Maximum Ratings*  
TA= 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
50  
50  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
4.5  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
100  
mA  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA= 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N5210  
PD  
Total Device Dissipation  
Derate above 25 C  
625  
5.0  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Case  
83.3  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
200  
Rθ  
C/W  
°
JA  
2N5210, Rev A  
2001 Fairchild Semiconductor Corporation  

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