2N5210RLRAG

更新时间： 2024-11-29 13:04:03

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安森美 - ONSEMI		晶体放大器晶体管
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2N5210RLRAG 数据手册

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SEMICONDUCTOR TECHNICAL DATA

NPN Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

Rating

Symbol

Value

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

4.0

Vdc

Collector Current — Continuous

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to

Ambient

200

°C/W

Thermal Resistance, Junction to Case

83.3

°C/W

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector–Emitter Breakdown Voltage

—

Vdc

(BR)CEO

(I = 1.0 mAdc, I = 0)

Collector–Base Breakdown Voltage

(I = 0.1 mAdc, I = 0)

(BR)CBO

Collector Cutoff Current

(V = 35 Vdc, I = 0)

nAdc

CBO

Emitter Cutoff Current

(V = 3.0 Vdc, I = 0)

EBO

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4 5 6

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