Datasheet > 2N5064

2N5064

更新时间： 2024-11-12 20:19:35

品牌	Logo	应用领域
DIGITRON		栅栅极
页数	文件大小	规格书
5页	888K
描述
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 200; Max TMS Bridge Input Voltage: 0.51; Max DC Reverse Voltage: 0.05; Capacitance: 5; Package: TO-92

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2N5064 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.66
Is Samacsys：	N	Base Number Matches：	1

2N5064 数据手册

2N5060-2N5064

SILICON CONTROLLED RECTIFIERS

High-reliability discrete products

and engineering services since 1977

FEATURES



Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

2N5060

2N5061

2N5062

2N5064

Peak repetitive off-state voltage ⁽¹⁾

V_DRM

V_RRM

(T_J= -40 to +110°C, sine wave, 50 to 60 Hz, gate open)

100

200

On-state current RMS (180° conduction angles, T_C= 80°C)

I_T(RMS)

0.8

Average on-state current

(180° conduction angles)

(T_C= 67°C)

I_T(AV)

0.51

(T_C= 102°C)

0.255

Peak non-repetitive surge current

(T_A= 25°C)

I_TSM

(1/2 cycle, sine wave, 60Hz)

Circuit fusing considerations

I²t

0.4

A²s

(t = 8.3 ms)

Average on-state current

(180° conduction angles)

(T_C= 67°C)

I_T(AV)

0.51

(T_C= 102°C)

0.255

Forward peak gate power

P_GM

P_G(AV)

I_GM

0.1

0.01

1.0

≤ 1.0µsec; T

(Pulse width

_A= 25°C)

Forward average gate power

(T_A= 25°C, t = 8.3ms)

Forward peak gate current

≤ 1.0µsec; T

(Pulse width

Reverse peak gate voltage

≤ 1.0µsec; T

_A= 25°C)

V_RGM

5.0

(Pulse width

_A= 25°C)

Operating junction temperature range

Storage temperature range

T_J

-40 to +110

-40 to +150

°C

T_stg

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously.

If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

V_DRMand V_RRMfor all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential

on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

THERMAL CHARACTERISTICS

Characteristics

Symbol

R_θJC

Max

Unit

°C/W

Thermal resistance, junction to case

Thermal resistance, junction to ambient

Lead solder temperature

R_θJA

200

230

°C

≥ 1/16” from case, 10 s max.)

(lead length

Rev. 20130116

12 3 4 5

中文翻译

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与2N5064相关器件

型号	品牌	获取价格	描述	数据表
2N5064,112	NXP	获取价格	2N5064
2N5064-18	MOTOROLA	获取价格	0.8A, 200V, SCR, TO-226AA
2N5064-5	MOTOROLA	获取价格	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-226AA
2N506473AP	TECCOR	获取价格	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-92, TO
2N506475	TECCOR	获取价格	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-92, TO
2N506475AP	TECCOR	获取价格	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-92, TO
2N5064APM	CENTRAL	获取价格	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(RRM), 1 Element, TO-92
2N5064APMLEADFREE	CENTRAL	获取价格	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(RRM), 1 Element, TO-92,
2N5064G	ONSEMI	获取价格	SILICON CONTROLLED RECTIFIERS 0.8 A RMS, 30 â
2N5064RLRA	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers

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