2N5064TRH

更新时间： 2024-09-15 13:04:03

品牌	Logo	应用领域
CENTRAL		栅极触发装置可控硅整流器
页数	文件大小	规格书
2页	76K
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2N5064TRH 数据手册

Central

2N5060 THRU 2N5064

Semiconductor Corp.

SILICON CONTROLLED RECTIFIER

0.8 AMP, 30 THRU 200 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N5060 series

types are epoxy molded Silicon Controlled

Rectifiers designed for control systems and

sensing circuit applications.

MARKING CODE: FULL PART NUMBER

TO-92 CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

2N5060 2N5061 2N5062 2N5063 2N5064 UNITS

Peak Repetitive Off-State Voltage

100

0.8

1.0

5.0

150

200

°C

DRM, RRM

RMS On-State Current (T =60°C)

T(RMS)

TSM

G (AV)

stg

Peak One Cycle Surge

Peak Forward Gate Current (tp=20µs)

Peak Reverse Gate Voltage

Peak Gate Power Dissipation

Average Gate Power Dissipation (t=20µs) P

Storage Temperature

Junction Temperature

2.0

0.1

-40 to +150

-40 to +125

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

1.0

200

350

5.0

UNITS

µA

V/µs

µs

Rated V

, V

=1KΩ

DRM, RRM

DRM, RRM, GK

, T =125°C, R =1KΩ

DRM, RRM

DRM RRM C GK

V =7.0V, R =100Ω, R =1KΩ

V =7.0V, R =100Ω, R =1KΩ, T =-65°C

=1KΩ

=1KΩ, T =-65°C

V =7.0V, R =100Ω

0.8

1.2

V =7.0V, R =100Ω, T =-65°C

V =7.0V, R =100Ω, T =125°C

0.1

=1.2A

1.7

dv/dt

V =0.67V x V

T =125°C, R =1KΩ

DRM,

V =0.67V x V

T =125°C, R =1KΩ

200

R4 (25-August 2004)

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