Datasheet > 2N492BHR

2N492BHR

更新时间： 2024-11-05 05:07:27

品牌	Logo	应用领域
DIGITRON		/
页数	文件大小	规格书
7页	677K
描述
Unijunction Transistor

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中文翻译

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数据手册

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2N492BHR 数据手册

2N489(A,B)-2N494(A,B)

SILICON UNIJUNCTION TRANSISTORS

High-reliability discrete products

and engineering services since 1977

FEATURES

•

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

Stable operation over wide temperature range

Low leakage current

Low peak point current

Guaranteed minimum pulse voltage

MAXIMUM RATINGS

Rating

Value

450mW

Total RMS Power Dissipation (Unstabilized)

Total RMS Power Dissipation (Stabilized)

RMS Emitter Current

600mW

70mA

Peak Emitter Current (T_J= 150°C)

Emitter Reverse Voltage (T_J= 150°C)

Operating Temperature Range

2 A

60 V

-65° to +140°C

-65° to +175°C

Operating Temperature Range (Stabilized)

Storage Temperature Range

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Maximum

Minimum

Valley

Intrinsic

standoff

ratio ⁽¹⁾

Modulated

interbase

current

Interbase

Emitter

saturation

voltage

Peak

point

current

Emitter reverse

current

resistance ⁽²⁾

point

current

Base one

peak

T_J=

150°C

pulse

R_B2

100Ω

V_B2E

60V

Part

number

I_R= 50mA

V_BB= 10V

I_E= 50mA

V_BB= 10V

V_B2E

=30V

voltage ⁽³⁾

V_BB= 3V

V_BB= 25V

V_B2E

V_RR= 10V

V_BB= 20V

10V

R_BBO

I_B2(MOI)

V_E(SAT)

Volts

I_EB2O

µA

I_EB2O

µA

I_P

I_V

V_OB1

kΩ

µA

Volts

Min

Max

.62

.68

Min

4.7

6.2

4.7

6.2

Max

6.8

9.1

6.8

9.1

Min

6.8

Max

2N489

.51

.56

2N489A

2N489B

2N490

0.2

2N490A

2N490B

2N490C

2N491

0.2

0.02

2N491A

2N491B

2N492

4.3

0.2

2N492A

2N492B

4.3

0.2

Rev. 20180710

12 3 4 5 6 7

中文翻译

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