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2N4905LEADFREE PDF预览

2N4905LEADFREE

更新时间: 2024-11-28 21:14:43
品牌 Logo 应用领域
CENTRAL 局域网开关晶体管
页数 文件大小 规格书
2页 488K
描述
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

2N4905LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-204AA
包装说明:TO-3, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.2
外壳连接:COLLECTOR最大集电极电流 (IC):5 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):7JEDEC-95代码:TO-3
JESD-30 代码:O-MBFM-P2JESD-609代码:e3
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

2N4905LEADFREE 数据手册

 浏览型号2N4905LEADFREE的Datasheet PDF文件第2页 
2N4904 2N4905 2N4906 PNP  
2N4913 2N4914 2N4915 NPN  
www.centralsemi.com  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2N4904, 2N4913  
series types are complementary silicon power transistors,  
manufactured by the epitaxial base process, designed  
for general purpose amplifier and switching applications.  
MARKING: FULL PART NUMBER  
TO-3 CASE  
2N4904  
2N4913  
40  
2N4905  
2N4914  
60  
2N4906  
2N4915  
80  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
UNITS  
V
C
V
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
40  
60  
5.0  
80  
V
V
Continuous Collector Current  
Continuous Base Current  
Power Dissipation  
I
5.0  
A
C
I
1.0  
A
B
P
87.5  
W
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +200  
2.0  
°C  
°C/W  
J
stg  
JC  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
PNP  
NPN  
MIN MAX  
SYMBOL  
TEST CONDITIONS  
MIN MAX  
UNITS  
mA  
I
I
I
I
I
V
V
V
V
V
=Rated V  
=Rated V  
=Rated V  
=Rated V  
=5.0V  
-
0.1  
1.0  
0.1  
2.0  
1.0  
-
-
1.0  
1.0  
1.0  
2.0  
1.0  
-
CBO  
CEO  
CEV  
CEV  
EBO  
CB  
CE  
CE  
CE  
EB  
CBO  
-
-
mA  
mA  
mA  
mA  
V
CEO  
, V =1.5V  
CEO BE  
-
-
, V =1.5V, T =150°C  
-
-
CEO BE  
C
-
-
BV  
BV  
BV  
I =200mA (2N4904, 2N4913)  
40  
60  
80  
-
40  
60  
80  
-
CEO  
CEO  
C
I =200mA (2N4905, 2N4914)  
-
-
V
C
I =200mA (2N4906, 2N4915)  
-
-
V
CEO  
C
V
V
V
I =2.5A, I =250mA  
1.0  
1.5  
1.4  
100  
-
1.0  
1.5  
1.4  
100  
-
V
CE(SAT)  
CE(SAT)  
BE(ON)  
FE  
C
B
I =5.0A, I =1.0A  
-
-
V
C
B
V
=2.0V, I =2.5A  
-
-
V
CE  
CE  
CE  
CE  
CE  
C
h
h
h
V
V
V
V
=2.0V, I =2.5A  
25  
7.0  
40  
4.0  
25  
7.0  
20  
4.0  
C
=2.0V, I =5.0A  
FE  
C
=10V, I =500mA, f=1.0kHz  
-
-
fe  
C
f
=10V, I =1.0A, f=1.0MHz  
-
-
MHz  
T
C
R1 (7-March 2013)  

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