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2N4400 PDF预览

2N4400

更新时间: 2024-02-29 00:10:06
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器
页数 文件大小 规格书
2页 45K
描述
NPN General Purpose Amplifier

2N4400 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:ActiveReach Compliance Code:not_compliant
风险等级:5.68Is Samacsys:N
基于收集器的最大容量:6.5 pF集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):50
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHz最大关闭时间(toff):255 ns
VCEsat-Max:0.75 VBase Number Matches:1

2N4400 数据手册

 浏览型号2N4400的Datasheet PDF文件第2页 
Discr ete P OWER & Sign a l  
Tech n ologies  
2N4400  
MMBT4400  
C
E
TO-92  
C
B
B
SOT-23  
Mark: 83  
E
NPN General Purpose Amplifier  
This device is designed for use as general purpose amplifiers  
and switches requiring collector currents to 500 mA. Sourced  
from Process 19. See PN2222A for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
40  
60  
V
V
6.0  
1.0  
V
Collector Current - Continuous  
A
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N4400  
*MMBT4400  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
350  
2.8  
mW  
mW/°C  
°C/W  
Rθ  
JC  
Rθ  
Thermal Resistance, Junction to Ambient  
200  
357  
°C/W  
JA  
1997 Fairchild Semiconductor Corporation  

2N4400 替代型号

型号 品牌 替代类型 描述 数据表
2N4400TF FAIRCHILD

类似代替

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2N3859A FAIRCHILD

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NPN General Purpose Amplifier

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