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2N4400 PDF预览

2N4400

更新时间: 2024-11-20 22:29:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 306K
描述
General Purpose Transistors(NPN Silicon)

2N4400 数据手册

 浏览型号2N4400的Datasheet PDF文件第2页浏览型号2N4400的Datasheet PDF文件第3页浏览型号2N4400的Datasheet PDF文件第4页浏览型号2N4400的Datasheet PDF文件第5页浏览型号2N4400的Datasheet PDF文件第6页 
Order this document  
by 2N4400/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
*Motorola Preferred Device  
COLLECTOR  
3
2
BASE  
1
EMITTER  
1
2
3
MAXIMUM RATINGS  
CASE 29–04, STYLE 1  
TO–92 (TO–226AA)  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
Unit  
V
CEO  
V
CBO  
V
EBO  
40  
60  
Vdc  
Vdc  
6.0  
600  
Vdc  
Collector Current — Continuous  
I
C
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
V
V
40  
60  
6.0  
Vdc  
Vdc  
(BR)CEO  
(I = 1.0 mAdc, I = 0)  
C
B
CollectorBase Breakdown Voltage  
(I = 0.1 mAdc, I = 0)  
(BR)CBO  
C
E
EmitterBase Breakdown Voltage  
(I = 0.1 mAdc, I = 0)  
V
Vdc  
(BR)EBO  
E
C
Base Cutoff Current  
(V = 35 Vdc, V  
I
0.1  
0.1  
µAdc  
µAdc  
BEV  
= 0.4 Vdc)  
= 0.4 Vdc)  
CE EB  
Collector Cutoff Current  
(V = 35 Vdc, V  
I
CEX  
CE EB  
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1996  

2N4400 替代型号

型号 品牌 替代类型 描述 数据表
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