5秒后页面跳转
2N4400 PDF预览

2N4400

更新时间: 2024-11-18 07:28:39
品牌 Logo 应用领域
美微科 - MCC 放大器
页数 文件大小 规格书
6页 247K
描述
NPN General Purpose Amplifier

2N4400 数据手册

 浏览型号2N4400的Datasheet PDF文件第2页浏览型号2N4400的Datasheet PDF文件第3页浏览型号2N4400的Datasheet PDF文件第4页浏览型号2N4400的Datasheet PDF文件第5页浏览型号2N4400的Datasheet PDF文件第6页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
2N4400  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS  
Compliant. See ordering information)  
NPN General  
Purpose Amplifier  
·
This device is designed for use as general purpose amplifiers and  
switches requiring collector currents to 500mA  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
·
·
·
Marking:Type number  
TO-92  
Maximum Ratings*  
Symbol  
A
E
Rating  
Rating  
40  
Unit  
V
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
60  
V
6.0  
V
B
Collector Current, Continuous  
Operating Junction Temperature  
Storage Temperature  
600  
mA  
OC  
OC  
TJ  
-55 to +150  
-55 to +150  
TSTG  
Thermal Characteristics  
Symbol  
PD  
Rating  
Max  
625  
5.0  
Unit  
mW  
mW/ OC  
Total Device Dissipation  
Derate above 25OC  
C
RJC  
RJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
83.3  
200  
OC/W  
OC/W  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
D
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
Collector-Emitter Breakdown Voltage*  
(I =1.0mAdc, IB=0)  
40  
60  
---  
---  
Vdc  
Vdc  
C
Collector-Base Breakdown Voltage  
(I =100ì Adc, IE=0)  
C
Emitter-Base Breakdown Voltage  
(I =100ì Adc, IC=0)  
6.0  
---  
---  
---  
Vdc  
E
E
B
G
I
Collector Cutoff Current  
(VCE=35Vdc, VEB=0.4Vdc)  
0.1  
0.1  
uAdc  
uAdc  
C
CEX  
IBL  
Base Cutoff Current  
(VCE=35Vdc, VEB=0.4Vdc)  
DIMENSIONS  
INCHES  
MIN  
MM  
* These ratings are limiting values above which the serviceability of any  
semiconductor device may be impaired.  
Notes: 1. These ratings are based on a maximum junction temperature of 150  
degrees C.  
2. These are steady state limits. The factory should be consulted on  
applications involving pulsed or low duty cycle operations.  
DIM  
A
B
C
D
MAX  
.190  
MIN  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
MAX  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
NOTE  
.170  
.170  
.550  
.010  
.130  
.096  
.190  
.590  
.020  
.160  
.104  
E
G
www.mccsemi.com  
1 of 6  
Revision: A  
2011/01/01  

与2N4400相关器件

型号 品牌 获取价格 描述 数据表
2N4400/D ONSEMI

获取价格

General Purpose Transistors NPN
2N4400/D10Z TI

获取价格

600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4400/D26Z TI

获取价格

600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4400/D27Z TI

获取价格

600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4400_01 TAITRON

获取价格

NPN General Purpose Amplifier
2N4400-18 MOTOROLA

获取价格

600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2N4400-18F CENTRAL

获取价格

Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18F,
2N4400-18FLEADFREE CENTRAL

获取价格

Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18F,
2N4400-18R CENTRAL

获取价格

Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18R,
2N4400-18RLEADFREE CENTRAL

获取价格

Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18R,