Datasheet > 2N4400

2N4400

更新时间： 2024-11-18 07:28:39

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
1页	105K
描述
NPN Plastic Encapsulated Transistor

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2N4400 数据手册

2N4400

0.6 A, 60 V

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



General Purpose Amplifier Transistor

TO-92

 Emitter

 Base

 Collector

Millimeter

Collector

REF.

Min.

4.40

4.30

12.70

3.30

0.36

Max.

4.70

3.81

0.56

0.51





Base

1.27 TYP.

1.10

2.42

0.36



Emitter

2.66

0.76

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector to Emitter Voltage

Emitter to Base Voltage

0.6

Collector Current - Continuous

Collector Power Dissipation

Thermal resistance, junction to ambient

Junction, Storage Temperature

P_C

625

°C / W

°C

R_θJA

T_J, T_STG

200

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Test Condition

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

V_(BR)CBO

I_C= 0.1mA, I_E= 0A

I_C= 1mA, I_B= 0A

I_E= 0.1mA, I_C= 0A

V_CB= 60V, I_E= 0 A

V_EB= 6V, I_C=0 mA

V_(BR)CEO

V_(BR)EBO

I_CBO

0.1

μA

Emitter Cut-Off Current

I_EBO

V_CE= 1V, I_C= 1mA

V_CE= 1V, I_C= 10mA

DC Current Gain

h_FE*

150

V_CE= 1V, I_C= 150mA

V_CE= 2V, I_C= 500mA

I_C= 150mA, I_B= 15mA

I_C= 500mA, I_B= 50mA

I_C= 150mA, I_B=15mA

I_C= 500mA, I_B= 50mA

V_CB= 5V, I_E= 0A, f=1MHz

V_EB= 5V, I_C= 0A, f=1MHz

0.4

0.75

0.95

1.2

6.5

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

V_CE(sat)

0.75

V_BE(sat)

Collector output Capacitance

Emitter input Capacitance

Transition Frequency

C_ob

C_ib

f_T*

200

MHz V_CE= 10V, I_C= 20mA, f=100MHz

*Pulse test：Pulse Width ≦ 300 μs, Duty Cycle ≦ 2.0%.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

29-Dec-2010 Rev. A

Page 1 of 1

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与2N4400相关器件

型号	品牌	获取价格	描述	数据表
2N4400/D	ONSEMI	获取价格	General Purpose Transistors NPN
2N4400/D10Z	TI	获取价格	600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4400/D26Z	TI	获取价格	600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4400/D27Z	TI	获取价格	600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4400_01	TAITRON	获取价格	NPN General Purpose Amplifier
2N4400-18	MOTOROLA	获取价格	600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2N4400-18F	CENTRAL	获取价格	Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18F,
2N4400-18FLEADFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18F,
2N4400-18R	CENTRAL	获取价格	Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18R,
2N4400-18RLEADFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18R,

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