Datasheet > 2N4338-41

2N4338-41

更新时间： 2024-11-29 22:35:51

品牌	Logo	应用领域
CALOGIC		放大器
页数	文件大小	规格书
1页	23K
描述
N-Channel JFET Low Noise Amplifier

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2N4338-41 数据手册

N-Channel JFET

Low Noise Amplifier

CORPORATION

2N4338 – 2N4341

FEATURES

ABSOLUTE MAXIMUM RATINGS

(T_A= 25^oC unless otherwise noted)

Exceptionally High Figure of Merit

Radiation Immunity

Extremely Low Noise and Capacitance

High Input Impedance

•

Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -50V

Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Storage Temperature Range . . . . . . . . . . . . . -65^oC to +200^oC

Operating Temperature Range . . . . . . . . . . . -55^oC to +175^oC

Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300^oC

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW

Derate above 25^oC . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/^oC

NOTE: Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These are

stress ratings only and functional operation of the device at these or

any other conditions above those indicated in the operational sections

of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

•

APPLICATIONS

Low-level Choppers

Data Switches

Multiplexers and Low Noise Amplifiers

•

PIN CONFIGURATION

ORDERING INFORMATION

Part

Package

Temperature Range

-55^oC to +175^oC

TO-18

2N4338-41

Hermetic TO-18

X2N4338-41 Sorted Chips in Carriers -55^oC to +175^oC

G,C

5010

ELECTRICAL CHARACTERISTICS (T_A= 25^oC unless otherwise specified)

2N4338

2N4339

2N4340

2N4341

SYMBOL

PARAMETER

Gate Reverse Current

UNITS

TEST CONDITIONS

MIN MAX MIN MAX MIN MAX MIN MAX

-0.1

I_GSS

V_GS= -30V, V_DS= 0

T_A= 150^oC

µA

BV_GSS

V_GS(off)

Gate-Source Breakdown Voltage

Gate-Source Cutoff Voltage

-50

-1

-50

-2

I_G= -1µA, V_DS= 0

-0.3

-1

-0.6 -1.8

-3

-6

V_DS= 15V, I_D= 0.1µA

0.05

(-5)

0.05

(-5)

0.05

(-5)

0.07

(-10) (V)

_DS= 15V,

I_D(off)

I_DSS

g_fs

Drain Cutoff Current

V_GS= ( )

Saturation Drain Current (Note 2)

0.2 0.6 0.5 1.5 1.2 3.6

V_DS= 15V, V_GS= 0

Common-Source Forward

Transconductance (Note 2)

600 1800 800 2400 1300 3000 2000 4000

_DS= 15V,

_GS= 0

µS

f = 1kHz

g_os

Common-Source Output Conductance

Drain-Source ON Resistance

2500

1700

1500

r_DS(on)

C_iss

800 ohm V_DS= 0, I_DS= 0

Common-Source Input Capacitance

_DS= 15V,

f = 1MHz

f = 1kHz

Common-Source Reverse Transfer

Capacitance

V_GS= 0 (Note 1)

C_rss

V_DS= 15V,

V_GS= 0

R_gen= 1meg,

BW = 200Hz

Noise Figure (Note 1)

NOTES: 1. For design reference only, not 100% tested.

2. Pulse test duration 2ms (non-JEDEC Condition).

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与2N4338-41相关器件

型号	品牌	获取价格	描述	数据表
2N4338-DIE	NJSEMI	获取价格	"FET
2N4338G	VISHAY	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206A
2N4338G-2	VISHAY	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206A
2N4338LEADFREE	CENTRAL	获取价格	Small Signal Field-Effect Transistor, 50V, 1-Element, N-Channel, Silicon, Junction FET, TO
2N4339	CALOGIC	获取价格	N-Channel JFET Low Noise Amplifier
2N4339	CENTRAL	获取价格	Junction FETs Low Frequency/ Low Noise
2N4339	INTERFET	获取价格	N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES
2N4339	INTERSIL	获取价格	N-CHANNEL JFET
2N4339	SEME-LAB	获取价格	LOW NOISE N-CHANNEL JFET
2N4339	VISHAY	获取价格	N-Channel JFETs

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