Datasheet > 2N3906_10

2N3906_10

更新时间： 2024-11-29 07:28:35

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
3页	381K
描述
PNP General Purpose Transistor

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数据手册

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2N3906_10 数据手册

2N3906

-0.2A, -40V

PNP General Purpose Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES

TO-92

ꢀ

Power Dissipation P_CM: 625mW (Ta=25°C)

Collector Current I_CM: -200mA

Collector – Base Voltage V_(BR)CBO: -40V

1Emitter

2Base

3Collector

CLASSIFICATION OF h_FE(1)

Millimeter

REF.

Min.

4.40

4.30

12.70

3.30

0.36

Max.

4.70

3.81

0.56

0.51

Product-Rank

Range

2N3906-O

2N3906-Y

200~300

2N3906-G

300~400

100~200

1.27 TYP.

1.10

2.42

0.36

2.66

0.76

Collector

Base

Emitter

ABSOLUTE MAXIMUM RATINGS ^{(T = 25°C unless otherwise specified)}

Parameter

Symbol

V_CBO

Ratings

Unit

Collector - Base Voltage

-40

Collector - Emitter Voltage

Emitter - Base Voltage

V_CEO

-40

V_EBO

-5

-0.2

Collector Current -Continuous

Cpllector Power Dissipation

Junction, Storage Temperature

I_C

P_C

625

T_J, T_STG

+150, -55 ~ +150

°C

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

Parameter

Symbol Min.

Typ.

Max.

Unit

Test Conditions

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter - Base Breakdown Voltage

Collector Cut-Off Current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-40

-5

I_C=-10µA, I_E=0

I_C=-1mA, I_B=0

I_E=-100µA, I_C=0

-0.1

-50

-0.1

400

µA

V_CB=-40V, I_E=0

Collector Cut-Off Current

I_CEX

V_CE=-30V, V_BE(off)=-3V

V_EB=-5V, I_C=0

Emitter Cut-Off Current

I_EBO

100

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

V_CE=-1V, I_C=-10mA

V_CE=-1V, I_C=-50mA

I_C=-50mA, I_B=-5mA

V_CE=-20V, I_C=-10mA, f=100MHz

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

-0.4

-0.95

250

MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

31-Dec-2010 Rev.B

Page 1 of 3

12 3

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