Datasheet > 2N3906-D27ZS00Z

2N3906-D27ZS00Z

更新时间： 2024-11-28 07:38:51

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	97K
描述
Transistor

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2N3906-D27ZS00Z 数据手册

2N3906

MMBT3906

PZT3906

TO-92

SOT-223

SOT-23

Mark: 2A

PNP General Purpose Amplifier

This device is designed for general purpose amplifier and switching

applications at collector currents of 10 µA to 100 mA.

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

5.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

200

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics

T_A= 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

2N3906

*MMBT3906

**PZT3906

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

625

5.0

83.3

350

2.8

1,000

8.0

mW/°C

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction to Ambient

200

357

125

°C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm².

2001 Fairchild Semiconductor Corporation

2N3906/MMBT3906/PZT3906, Rev A

12 3 4 5 6

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