是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-3 |
包装说明: | FLANGE MOUNT, O-MBFM-P2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.15 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 10 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 25 |
JEDEC-95代码: | TO-204AA | JESD-30 代码: | O-MBFM-P2 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 4 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N3713_12 | COMSET |
获取价格 |
EPITAXIAL-BASE TRANSISTORS |
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2N3713A | NJSEMI |
获取价格 |
Trans GP BJT NPN 60V 10A 3-Pin(2+Tab) TO-3 Sleeve |
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2N3713SMD | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed |
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2N3714 | BOCA |
获取价格 |
SILICON NPN POWER TRANSISTORS |
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2N3714 | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed TO3 |
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2N3714 | COMSET |
获取价格 |
EPITAXIAL-BASE NPN - PNP |
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2N3714 | NJSEMI |
获取价格 |
Trans GP BJT NPN 80V 10A 3-Pin(2+Tab) TO-3 Sleeve |
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2N3714 | CENTRAL |
获取价格 |
80V,10A,150W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Swi |
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2N3714LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 |
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2N3714SMD | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed |
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