是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-276AB |
包装说明: | CHIP CARRIER, R-CBCC-N3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.23 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 10 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 25 | JEDEC-95代码: | TO-276AB |
JESD-30 代码: | R-CBCC-N3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 4 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N3714 | BOCA |
获取价格 |
SILICON NPN POWER TRANSISTORS |
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2N3714 | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed TO3 |
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2N3714 | COMSET |
获取价格 |
EPITAXIAL-BASE NPN - PNP |
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2N3714 | NJSEMI |
获取价格 |
Trans GP BJT NPN 80V 10A 3-Pin(2+Tab) TO-3 Sleeve |
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2N3714 | CENTRAL |
获取价格 |
80V,10A,150W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Swi |
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2N3714LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 |
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2N3714SMD | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed |
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2N3715 | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed TO3 |
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2N3715 | ISC |
获取价格 |
isc Silicon NPN Power Transistors |
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2N3715 | COMSET |
获取价格 |
EPITAXIAL-BASE NPN - PNP |
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