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2N3700S PDF预览

2N3700S

更新时间: 2024-01-31 21:29:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
2页 65K
描述
LOW POWER NPN SILICON TRANSISTOR

2N3700S 技术参数

生命周期:TransferredReach Compliance Code:compliant
风险等级:5.61Is Samacsys:N
Base Number Matches:1

2N3700S 数据手册

 浏览型号2N3700S的Datasheet PDF文件第2页 
TECHNICAL DATA  
LOW POWER NPN SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 391  
Devices  
2N3019  
Qualified Level  
JAN  
2N3057A  
2N3700  
2N3019S  
2N3700S  
JANTX  
JANTXV  
JANS  
MAXIMUM RATINGS  
Ratings  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Symbol  
Value  
80  
Units  
Vdc  
VCEO  
VCBO  
VEBO  
IC  
140  
7.0  
Vdc  
TO-39* (TO-205AD)  
2N3019, 2N3019S  
Vdc  
1.0  
Adc  
Total Power Dissipation  
@ TA = +250C(1)  
W
2N3019; 2N3019S  
2N3057A  
2N3700  
0.8  
0.4  
0.5  
0.4  
TO- 18* (TO-206AA)  
2N3700  
2N3700UB  
PT  
@ TC = +250C(2)  
W
2N3019; 2N3019S  
2N3057A  
5.0  
1.8  
2N3700  
2N3700UB  
Operating & Storage Jct Temp Range  
1.8  
1.16  
-55 to +175  
TO-46* (TO-206AB)  
2N3057A  
0C  
TJ, T  
stg  
1) Derate linearly 4.6 mW/0C for type 2N3019 and 2N3019S; 2.3 mW/0C for type 2N3057A;  
2.85 mW/0C for type 2N3700; 6.6 mW/0C for type 2N3700UB for TA ³ +250C.  
2) Derate linearly 28.6 mW/0C for type 2N3019 and 2N3019S;  
3 PIN SURFACE MOUNT*  
2N3700UB  
10.3 mW/0C for types 2N3057A, 2N3700, & 2N3700UB for TC ³ +250C.  
*See appendix A for package  
outline  
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Base Breakdown Voltage  
IC = 100 mAdc  
Emitter-Base Breakdown Voltage  
IE = 100 mAdc  
Collector-Emitter Breakdown Current  
IC = 30 mAdc  
140  
7.0  
80  
Vdc  
Vdc  
Vdc  
V(BR)  
CBO  
V(BR)  
EBO  
V(BR)  
CEO  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  

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