2N3700SW

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2N3700SW 数据手册

2N3700

GENERAL PURPOSE AMPLIFIERS

DESCRIPTION

The 2N3700 is a silicon planar epitaxial NPN tran-

sistorin Jedec TO-18 metal case, intended for small

signal, low noise industrial applications.

TO-18

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-base Voltage (I_E= 0)

Value

140

Unit

Collector-emitter Voltage (I_B= 0)

Emitter-base Voltage (I_C= 0)

Collector Current

P_{to t}

Total Power Dissipation at T_amb≤ 25 °C

at T_{cas e}≤ 25 °C

0.5

1.8

at T_{cas e}≤ 100 °C

T_stg, T_j

Storage and Junction Temperature

– 65 to 200

°C

January 1989

1/4

12 3 4

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型号	品牌	获取价格	描述	数据表
2N3700UB	SEMICOA	获取价格	Type 2N3700UB Geometry 4500 Polarity NPN
2N3700UB06	STMICROELECTRONICS	获取价格	SMALL SIGNAL TRANSISTOR
2N3700UB06SW	STMICROELECTRONICS	获取价格	SMALL SIGNAL TRANSISTOR
2N3701	CENTRAL	获取价格	Small Signal Transistors
2N3701	NJSEMI	获取价格	NPN SMALL SIGNAL GENERAL PURPOSE AMPLIFIERS
2N3701LEADFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO
2N3702	MICRO-ELECTRONICS	获取价格	PNP/NPN SILICON GENERAL PURPOSE AF TRANSISTORS
2N3702	CENTRAL	获取价格	Small Signal Transistors
2N3702	NJSEMI	获取价格	EPITAXIAL PLANAR SILICON TRANSISTORS
2N3702	FAIRCHILD	获取价格	PNP General Purpose Amplifier