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2N3702_02

更新时间： 2024-01-18 19:52:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器
页数 文件大小 规格书
3页 59K
描述
PNP General Purpose Amplifier

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2N3702_02 数据手册

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2N3702  
PNP General Purpose Amplifier  
•
This device designed for use as general purpose amplifier and  
switches requiring collector currents to 300mA.  
Sourced from Process 68.  
See PN200 for Characteristics.  
•
•
TO-92  
1. Emitter 2. Collector 3. Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings* T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
-25  
Units  
V
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
CEO  
-40  
V
CBO  
EBO  
-5.0  
V
I
- Continuous  
-500  
mA  
°C  
C
T , T  
Operating and Storage Junction Temperature Range  
-55 ~ +150  
J
ST  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
Off Characteristics  
BV  
BV  
BV  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
I
I
= -10mA, I = 0  
-25  
-40  
-5.0  
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
C
C
E
B
= -100µA, I = 0  
E
= -100µA, I = 0  
V
C
I
I
V
V
= -20V, I = 0  
-100  
-100  
nA  
nA  
CBO  
EBO  
CB  
EB  
E
Emitter Cut-off Current  
= -3.0V, I = 0  
C
On Characteristics *  
h
DC Current Gain  
V
= -5.0V, I = -50mA  
60  
300  
-0.25  
-1.0  
FE  
CE  
C
V
V
(sat)  
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
I
= -50mA, I = -5.0mA  
V
V
CE  
C
B
V
= -5.0V, I = -50mA  
-0.6  
BE  
CE  
C
Small Signal Characteristics  
C
Current Gain Bandwidth Product  
Output Capacitance  
V
= -10V, f = 1.0MHz  
12  
pF  
ob  
CB  
f
I = -50mA, V = -5.0V  
100  
MHz  
T
E
CE  
* Pulse Test: Pulse ≤ 300µs, Duty Cycle ≤ 2.0%  
Thermal Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Max.  
Units  
P
Total Device Dissipation  
Derate above 25°C  
625  
5.0  
mW  
mW/°C  
D
R
R
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
83.3  
200  
°C/W  
°C/W  
θJC  
θJA  
©2002 Fairchild Semiconductor Corporation  
Rev. B, July 2002  
123

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