Datasheet > 2N3700UB06SW

2N3700UB06SW

更新时间： 2023-05-15 00:00:00

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
20页	411K
描述
SMALL SIGNAL TRANSISTOR

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2N3700UB06SW 数据手册

2N3700HR

Hi-Rel 80 V, 1 A NPN transistor

Datasheet

production data

Features

BVCEO

80 V

1 A

IC(max)

TO-18

HFE at 10 V - 150 mA

>100

LCC-3

• Hermetic packages

Pin 4 in UB is connected to the metallic lid

• ESCC and Jans qualified

• Up to 100 krad(Si) low dose rate

Figure 1. Internal schematic diagram

Description

The 2N3700HR is a NPN transistor specifically

designed for aerospace and Hi-Rel applications. It

is available in the JAN qualification system (MIL-

PRF19500) and in the ESCC qualification system

(ESCC 5000). In case of discrepancies between

this datasheet and the relevant agency

specification, the latter takes precedence.

Table 1. Device summary

Qualification

system

Device

Agency specification

Package

Radiation level

EPPL

JANSR2N3700UBx

JANS2N3700UBx

2N3700RUBx

2N3700UB0xSW

2N3700UB0x

JANSR

JANS

ESCC

MIL-PRF-19500/391

5201/004

100 krad HDR

100 krad ESCC

100 krad SW

Target

5201/004

Target

SOC3700RHRx

SOC3700SW

SOC3700HRB

2N3700RHRx

2N3700SW

5201/004

LCC-3

TO-18

100 krad ESCC

100 krad SW

Yes

5201/004

Yes

5201/004

100 krad ESCC

100 krad SW

5201/004

2N3700HR

5201/004

September 2013

DocID15354 Rev 7

1/20

This is information on a product in full production.

www.st.com

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