Datasheet > 2N3506_02

2N3506_02

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
SEMICOA		晶体晶体管
页数	文件大小	规格书
2页	199K
描述
Silicon NPN Transistor

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2N3506_02 数据手册

2N3506

Silicon NPN Transistor

Data Sheet

Description

Applications

• General purpose switching transistor

• Low power

Semicoa Semiconductors offers:

• NPN silicon transistor

• Screening and processing per MIL-PRF-19500 Appendix E

• JAN level (2N3506J)

• JANTX level (2N3506JX)

• JANTXV level (2N3506JV)

• JANS level (2N3506JS)

• QCI to the applicable level

• 100% die visual inspection per MIL-STD-750 method

2072 for JANTXV and JANS

Features

• Radiation testing (total dose) upon request

• Hermetically sealed TO-39 metal can

• Also available in chip configuration

• Chip geometry 1506

• Reference document:

MIL-PRF-19500/349

Benefits

• Qualification Levels: JAN, JANTX,

JANTXV and JANS

• Radiation testing available

Please contact Semicoa for special configurations

www.SEMICOA.com or (714) 979-1900

Absolute Maximum Ratings

T_C= 25°C unless otherwise specified

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Symbol

V_CEO

V_CBO

Rating

Unit

Volts

V_EBO

I_C

Collector Current, Continuous

Power Dissipation, T_A= 25^OC

Derate linearly above 25^OC

Power Dissipation, T_C= 25^OC

Derate linearly above 25^OC

P_T

5.71

mW/°C

28.6

mW/°C

°C/W

Thermal Resistance

175

R_θJA

T_J

°C

Operating Junction Temperature

Storage Temperature

-65 to +200

T_STG

Semicoa Semiconductors, Inc.

Rev. E

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

Page 1 of 2

www.SEMICOA.com

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