Datasheet > 2N3500

2N3500

更新时间： 2024-09-22 22:29:27

品牌	Logo	应用领域
SEMICOA		晶体晶体管
页数	文件大小	规格书
2页	48K
描述
Type 2N3500 Geometry 5620 Polarity NPN

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数据手册

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2N3500 数据手册

Data Sheet No. 2N3500

Ge ne ric Pa rt Numbe r:

2N3500

Type 2N3500

Geometry 5620

Polarity NPN

Qual Level: JAN - JANTXV

REF: MIL-PRF-19500/366

Features:

General-purpose silicon transistor

for switching and amplifier appli-

cations.

Housed in TO-39 case.

Also available in chip form using

the 5620 chip geometry.

The Min and Max limits shown are

per MIL-PRF-19500/366 which

Semicoa meets in all cases.

TO-39

Maximum Ratings

T_C= 25^oC unless otherwise specified

Rating

Symbol

V_CEO

V_CBO

V_EBO

I_C

Rating

150

Unit

Collector-Emitter voltage

Collector-Base Voltage

Emitter-Base voltage

Collector Current, Continuous

Power Dissipation, T_A= 25^oC

150

6.0

300

5.0

P_D

Derate above 25^oC

mW/^oC

^oC

28.8

T_J

Operating Junction Temperature

Storage Temperature

-65 to +200

^oC

T_STG

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