是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | POST/STUD MOUNT, O-MUPM-D3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.46 |
Is Samacsys: | N | 最大集电极电流 (IC): | 5 A |
集电极-发射极最大电压: | 40 V | 最小直流电流增益 (hFE): | 10 |
JEDEC-95代码: | TO-61 | JESD-30 代码: | O-MUPM-D3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | SOLDER LUG |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N3187E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 | |
2N3188 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 | |
2N3189 | MICROSEMI |
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Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 | |
2N3189E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 | |
2N319 | ETC |
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alloy-junction germanium transistors | |
2N3190 | MICROSEMI |
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Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 | |
2N3190E3 | MICROSEMI |
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Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 | |
2N3195 | APITECH |
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Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 P | |
2N3195 | MICROSEMI |
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Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin | |
2N3195E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, |