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2N3187 PDF预览

2N3187

更新时间: 2024-11-15 21:00:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体管
页数 文件大小 规格书
1页 86K
描述
Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 Pin

2N3187 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:POST/STUD MOUNT, O-MUPM-D3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.46
Is Samacsys:N最大集电极电流 (IC):5 A
集电极-发射极最大电压:40 V最小直流电流增益 (hFE):10
JEDEC-95代码:TO-61JESD-30 代码:O-MUPM-D3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:SOLDER LUG
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

2N3187 数据手册

  

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