生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.77 | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 40 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 20 | JEDEC-95代码: | TO-205AD |
JESD-30 代码: | O-MBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 1 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N3202E3 | MICROSEMI | Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, PNP, Silicon, TO-5, Metal, 3 Pin, |
获取价格 |
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2N3203 | MICROSEMI | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, PNP, Silicon, TO-5, Metal, 3 Pin |
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2N3203E3 | MICROSEMI | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, PNP, Silicon, TO-5, Metal, 3 Pin, |
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2N3204 | MICROSEMI | Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, PNP, Silicon, TO-5, Metal, 3 Pin |
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2N3204 | APITECH | Power Bipolar Transistor, 3A I(C), 1-Element, PNP, Silicon, TO-5, Metal, 3 Pin, |
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2N3204E3 | MICROSEMI | Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, PNP, Silicon, TO-5, Metal, 3 Pin, |
获取价格 |