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2N2369A PDF预览

2N2369A

更新时间: 2024-11-26 22:35:51
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体开关晶体管
页数 文件大小 规格书
2页 67K
描述
NPN SILICON SWITCHING TRANSISTOR

2N2369A 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:BCY
包装说明:CYLINDRICAL, O-MBCY-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:1.49
外壳连接:COLLECTOR最大集电极电流 (IC):0.5 A
基于收集器的最大容量:4 pF集电极-发射极最大电压:15 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-206AAJESD-30 代码:O-MBCY-W3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN功耗环境最大值:1.2 W
最大功率耗散 (Abs):1.2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:TIN LEAD端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):500 MHz最大关闭时间(toff):18 ns
最大开启时间(吨):12 nsVCEsat-Max:0.45 V
Base Number Matches:1

2N2369A 数据手册

 浏览型号2N2369A的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN SILICON SWITCHING TRANSISTOR  
Qualified per MIL-PRF-19500/ 317  
Devices  
Qualified Level  
2N2369A  
2N4449  
JAN  
JANTX  
JANTXV  
2N2369AU  
2N2369AUA  
2N2369AUB  
2N4449U  
2N4449UA  
2N4449UB  
MAXIMUM RATINGS  
Ratings  
Collector-Emitter Voltage  
Symbol  
VCEO  
VEBO  
VCBO  
VCES  
All UB  
20  
All others  
Unit  
Vdc  
15  
Emitter-Base Voltage  
6.0  
4.5  
Vdc  
Vdc  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
40  
40  
TO-18* (TO-206AA)  
2N2369A  
@ TA = +250C @ TC = +250C  
Total Power Dissipation  
2N2369A; 2N4449  
All UA  
0.50(1)  
0.50(5)  
0.40(6)  
0.60(3)  
1.2(2)  
1.2(2)  
1.4(7)  
1.5(4)  
W
W
PT  
All UB  
All U  
0C  
TO-46 (TO-206AB)  
2N4449  
Operating & Storage Junction Temperature Range  
-65 to +200  
Top, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
Thermal Resistance, Junction-to-Case  
2N2369A; 2N4449  
All UA  
All UB  
146  
125  
135  
117  
0C/mW  
SURFACE MOUNT  
UA*  
R
qJC  
All U  
Thermal Resistance, Ambient-to-Case  
2N2369A; 2N4449  
325  
350  
437  
291  
0C/mW  
SURFACE MOUNT  
UB*  
All UA  
All UB  
All U  
R
qJA  
1) Derate linearly 3.08 mW/0C above TA = +37.50C  
2) Derate linearly 6.85 mW/0C above TC = +250C  
3) Derate linearly 3.44 mW/0C above TA = +63.50C  
4) Derate linearly 8.55 mW/0C above TC = +63.50C  
5) Derate linearly 2.86 mW/0C above TC = +63.50C  
6) Derate linearly 2.29 mW/0C above TC = +63.50C  
7) Derate linearly 8.00 mW/0C above TC = +63.50C  
SURFACE MOUNT  
U*  
*See appendix A for  
package outline  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

2N2369A 替代型号

型号 品牌 替代类型 描述 数据表
JANS2N2369A MICROSEMI

完全替代

Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,

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