Datasheet > 2N2369A_1

2N2369A_1

更新时间： 2024-11-27 07:28:19

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
2页	49K
描述
NPN SILICON TRANSISTOR

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数据手册

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2N2369A_1 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN SILICON TRANSISTOR

Qualified per MIL-PRF-19500/317

DEVICES

LEVELS

2N2369A

2N2369AU

2N2369AUA

2N2369AUB

2N2369AUBC *

2N4449

JAN

JANTX

JANTXV

JANS

* Available to JANS quality level only.

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

Value

Unit

2N2369A / U / UA

2N4449 / UB / UBC

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

Vdc

2N2369A / U / UA

2N4449 / UB / UBC

4.5

6.0

TO-18 (TO-206AA)

2N2369A

V_EBO

Vdc

Collector-Base Voltage

V_CBO

I_CES

Vdc

Collector-Emitter Voltage

Total Power Dissipation @

T_A= +25°C

2N2369A; 2N4449

UA, UB, UBC

0.36 ⁽¹⁾

0.36 ^{(1, 5)}

0.50 ⁽⁴⁾

P_T

TO-46 (TO-206AB)

2N4449

Operating & Storage Junction Temperature Range

T_op, T_stg

-65 to +200

°C

THERMAL CHARACTERISTICS

Parameters / Test Conditions

Symbol

Value

Unit

Thermal Resistance, Ambient-to-Case

2N2369A; 2N4449

UA, UB, UBC

400

400 ⁽⁵⁾

350

°C/W

R_θJA

SURFACE MOUNT

Note:

1. Derate linearly 2.06 mW°/C above T_A= +25°C.

2. Derate linearly 4.76 mW°/C above T_C= +95°C.

3. Derate linearly 3.08 mW°/C above T_C= +70°C.

4. Derate linearly 3.44 mW°/C above T_A= +54.5°C.

5. Mounted on FR-4 PCB (1Oz. Cu) with contacts 20 mils larger than package pads.

SURFACE MOUNT

UB & UBC

(UBC = Ceramic Lid Version)

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Symbol

Min.

Max.

Unit

Collector-Emitter Breakdown Voltage

I_C= 10mAdc

V_(BR)CEO

I_CES

Vdc

SURFACE MOUNT

U (Dual Transistor)

Collector-Base Cutoff Current

V_CE= 20Vdc

0.4

μAdc

T4-LDS-0057 Rev. 2 (081394)

Page 1 of 2

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