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2N2369 PDF预览

2N2369

更新时间: 2024-11-26 22:35:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管
页数 文件大小 规格书
4页 46K
描述
HIGH-FREQUENCY SATURATED SWITCH

2N2369 数据手册

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2N2369  
HIGH-FREQUENCY SATURATED SWITCH  
DESCRIPTION  
The 2N2369 is a silicon planar epitaxial NPN tran-  
sistorin JedecTO-18metal case. It is designed spe-  
cifically for high-speed saturated switching applica-  
tions at current levels from 100 µA to 100 mA.  
TO-18  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
VCES  
VCEO  
VEBO  
ICM  
Parameter  
Collector-base Voltage (IE = 0)  
Value  
40  
Unit  
V
V
V
V
A
Collector-emitter Voltage (VBE = 0)  
Collector-emitter Voltage (IB = 0)  
Emitter-base Voltage (IC = 0)  
40  
15  
4.5  
0.5  
Collector Peak Current (t = 10 µs)  
Pto t  
Total Power Dissipation at Tamb 25 °C  
at Tcas e 25 °C  
0.36  
1.2  
0.68  
W
W
W
at Tcas e 100 °C  
T
stg, Tj  
Storage and Junction Temperature  
– 65 to 200  
°C  
Products approved to CECC 50004-022/023 available on request.  
January 1989  
1/4  

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