Datasheet > 2ED2103S06F

2ED2103S06F

更新时间： 2023-09-03 20:32:05

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
25页	1151K
描述
650 V high speed half-bridge gate driver with typical 0.29 A source and 0.7 A sink currents in DSO-8 package for driving power MOSFETs and IGBTs.

阅读下载

获取价格

如果您发现信息不准确，欢迎纠错

2ED2103S06F 数据手册

2ED2103S06F

650 V high-side and low-side driver with integrated bootstrap diode

Revision history

Document

version

2.3

Date of release

Description of changes

Final Datasheet

Dec 07, 2020

Datasheet

www.infineon.com/soi

24 of 25

V 2.3

2020-12-07

下载PDF

型号	品牌	描述	获取价格	数据表
2ED2104S06F	INFINEON	650 V high speed half-bridge gate driver with typical 0.29 A source and 0.7 A sink current	获取价格
2ED21064S06J	INFINEON	650 V half bridge gate driver with integrated bootstrap diode	获取价格
2ED2106S06F	INFINEON	650 V high-side and low-side gate driver with integrated bootstrap diode	获取价格
2ED21084S06J	INFINEON	650 V high-side and low-side gate driver with integrated bootstrap diode	获取价格
2ED21084S06JXUMA1	INFINEON	Half Bridge Based Peripheral Driver,	获取价格
2ED2108S06F	INFINEON	650 V half bridge gate driver with integrated bootstrap diode	获取价格