Datasheet > 2ED2103S06F

2ED2103S06F

更新时间： 2023-09-03 20:32:05

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
25页	1151K
描述
650 V high speed half-bridge gate driver with typical 0.29 A source and 0.7 A sink currents in DSO-8 package for driving power MOSFETs and IGBTs.

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Edition 2020-12-07

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