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2ED21084S06J PDF预览

2ED21084S06J

更新时间: 2022-05-14 22:20:34
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
24页 1615K
描述
650 V high-side and low-side gate driver with integrated bootstrap diode

2ED21084S06J 数据手册

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2ED2106 (4) S06F (J)  
650 V high-side and low-side gate driver with integrated bootstrap diode  
Features  
Product summary  
Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology  
Negative VS transient immunity of 100 V  
VS_OFFSET = 650 V max  
Io+pk / Io-pk (typ.) = + 0.29 A/ - 0.7 A  
VCC = 10 V to 20 V  
Delay matching = 35 ns max.  
Propogation delay = 200 ns  
tON / tOFF (typ.) = 200 ns/ 200 ns  
Floating channel designed for bootstrap operation  
Operating voltages (VS node) upto + 650 V  
Maximum bootstrap voltage (VB node) of + 675 V  
Integrated ultra-fast, low resistance bootstrap diode  
Logic operational up to –11 V on VS Pin  
Negative voltage tolerance on inputs of –5 V  
Independent under voltage lockout for both channels  
Schmitt trigger inputs with hysteresis  
3.3 V, 5 V and 15 V input logic compatible  
Maximum supply voltage of 25 V  
Dual package options of DSO-8 and DSO-14  
High and low voltage pins separated for maximum creepage and  
clearance (2ED21064S06J version)  
Packages  
Separate logic and power ground with the 2ED21064S06J version  
RoHS compliant  
DSO-14  
DSO-8  
Potential applications  
Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications.  
Typical Infineon recommendations are as below:  
Motor drives, general purpose inverters having TRENCHSTOPIGBT6 or 600 V EasyPACKmodules or its  
equivalent power stages  
Refrigeration compressors, induction cookers, other major home appliances having RCD series IGBTs or  
TRENCHSTOPfamily IGBTs or their equivalent power stages  
Battery operated small home appliances such as power tools, vaccum cleaners using low voltage OptiMOS™  
MOSFETs or their equivalent power stages  
Totem pole, half-bridge and full-bridge converters in offline AC-DC power supplies for industrial SMPS having  
high voltage CoolMOSsuper junction MOSFETs or TRENCHSTOPH3 and WR5 IGBT series or their equivalent  
High power LED and HID lighting having CoolMOSsuper junction MOSFETs  
Electric vehicle (EV) charging stations and battery management systems  
Driving 650 V SiC MOSFETs in above applications  
Product validation  
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22  
Ordering information  
Standard pack  
Base part number Package type  
Orderable part number  
Form  
Quantity  
2500  
2ED2106S06F  
2ED21064S06J  
DSO - 8  
DSO - 14  
Tape and Reel  
Tape and Reel  
2ED2106S06FXUMA1  
2ED21064S06JXUMA1  
2500  
Datasheet  
www.infineon.com/soi  
Please read the Important Notice and Warnings at the end of this document  
Page 1 of 24  
V 2.22  
2020-07-02  

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