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2N7000-G PDF预览

2N7000-G

更新时间: 2024-02-19 18:17:43
品牌 Logo 应用领域
超科 - SUPERTEX 晶体小信号场效应晶体管开关输入元件
页数 文件大小 规格书
5页 524K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

2N7000-G 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-W3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.82
其他特性:LOGIC LEVEL COMPATIBLE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):0.3 A
最大漏源导通电阻:5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-226AAJESD-30 代码:O-PBCY-W3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON

2N7000-G 数据手册

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2N7000  
Electrical Characteristics (TA = 25°C unless otherwise specified)  
Symbol Parameter  
Min  
60  
0.8  
-
Typ  
Max  
-
Units Conditions  
BVDSS  
VGS(th)  
IGSS  
Drain-to-source breakdown voltage  
-
-
-
-
V
V
VGS = 0V, ID = 10µA  
VGS = VDS, ID = 1.0mA  
Gate threshold voltage  
±.0  
10  
Gate body leakage current  
nA  
µA  
VGS = ±15V, VDS = 0V  
VGS = 0V, VDS = 48V  
-
1.0  
IDSS  
Zero gate voltage drain current  
VGS = 0V, VDS = 48V,  
TA = 125OC  
-
-
1.0  
mA  
mA  
ID(ON)  
ON-state drain current  
75  
-
-
5.±  
5.0  
-
VGS = 4.5V, VDS = 10V  
VGS = 4.5V, ID = 75mA  
VGS = 10V, ID = 500mA  
-
-
Static drain-to-source  
ON-state resistance  
RDS(ON)  
Ω
-
-
GFS  
CISS  
COSS  
CRSS  
t(ON)  
Forward transconductance  
Input capacitance  
100  
-
mmho VDS = 10V, ID = 200mA  
VGS = 0V, V = 25V,  
-
-
-
-
-
-
-
60  
25  
5
f = 1.0MHzDS  
pF  
Common source output capacitance  
Reverse transfer capacitance  
Turn-ON time  
-
-
-
-
10  
10  
-
VDD = 15V, I = 500mA,  
RGEN = 25D  
ns  
t(OFF)  
Turn-OFF time  
VSD  
Diode forward voltage drop  
0.85  
V
VGS = 0V, ISD = 200mA  
Notes:  
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)  
2. All A.C. parameters sample tested.  
Thermal Characteristics  
ID  
ID  
Power Dissipation  
*
θJC  
IDR  
IDRM  
θJA  
O
(continuous)* (pulsed)  
@T = 25 C  
Device  
Package  
(OC/W)  
(OC/W)  
(mA)  
(mA)  
(mA)  
(mA)  
C(W)  
2N7000  
TO-92  
200  
500  
1.0  
125  
170  
200  
500  
Notes:  
* ID (continuous) is limited by max rated TJ.  
Switching Waveforms and Test Circuit  
VDD  
10V  
90%  
RL  
INPUT  
PULSE  
GENERATOR  
10%  
0V  
OUTPUT  
t(ON)  
td(ON)  
t(OFF)  
td(OFF)  
RGEN  
tr  
tF  
VDD  
0V  
D.U.T.  
10%  
10%  
INPUT  
OUTPUT  
90%  
90%  
2

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