Datasheet > 2N7000KLE3

2N7000KLE3

更新时间： 2024-02-12 03:13:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	97K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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技术参数
数据手册

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2N7000KLE3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	0.47 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e3	湿度敏感等级：	1
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.8 W
子类别：	FET General Purpose Power	表面贴装：	NO
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

2N7000KLE3 数据手册

2N7000KL/BS170KL

New Product

Vishay Siliconix

N-Channel 60-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFET

PRODUCT SUMMARY

D ESD Protected: 2000 V

APPLICATIONS

V_DS(V)

r_DS(on)(W)

V_GS(th)(V)

I_D(A)

0.47

2 @ V = 10 V

1.0 to 2.5

D Direct Logic-Level Interface: TTL/CMOS

D Soild State Relays

4 @ V = 4.5 V

0.33

D Drivers: Relays, Solenoids, Lamps, Hammers,

Displays, Memories, Transistors, etc.

D Battery Operated Systems

TO-226AA

(TO-92)

TO-92-18RM

(TO-18 Lead Form)

Device Marking

Front View

100 W

“S” 2N

7000KL

xxyy

“S” BS

170KL

xxyy

“S” = Siliconix Logo

xxyy = Date Code

“S” = Siliconix Logo

xxyy = Date Code

Top View

Ordering Information: 2N7000KL-TR1

Ordering Information: BS170KL-TR1

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

0.47

= 25_C

Continuous Drain Current (T = 150__C)

T = 70_C

0.37

Pulsed Drain Current

1.0

= 25_C

= 70_C

0.8

Power Dissipation

0.51

Maximum Junction-to-Ambient

thJA

156

_C/W

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

Notes

a. Pulse width limited by maximum junction temperature.

Document Number: 72705

S-40247—Rev. A, 16-Feb-04

www.vishay.com

12 3 4 5

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