Datasheet > 2N7000KLE3

2N7000KLE3

更新时间： 2024-01-16 01:03:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	97K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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技术参数
数据手册

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2N7000KLE3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	0.47 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e3	湿度敏感等级：	1
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.8 W
子类别：	FET General Purpose Power	表面贴装：	NO
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

2N7000KLE3 数据手册

2N7000KL/BS170KL

Vishay Siliconix

New Product

SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)

Limits

Typ

Parameter

Symbol

Test Conditions

Min

Max

Unit

Static

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

= 0 V, I = 10 mA

(BR)DSS

= V , I = 250 mA

2.0

2.5

GS(th)

GS D

= 0 V, V = "10 V

GSS

= 60 V, V = 0 V

Zero Gate Voltage Drain Current

DSS

= 60 V, V = 0 V, T = 55_C

= 10 V, V = 7.5 V

0.8

0.5

On-State Drain Current

D(on)

= 4.5 V, V = 10 V

= 10 V, I = 0.5 A

1.1

1.6

Drain-Source On-Resistance

DS(on)

= 4.5 V, I = 0.2 A

Forward Transconductance

= 10 V, I = 0.5 A

550

0.87

Diode Forward Voltage

= 0.3 A, V = 0 V

1.3

0.6

Dynamic^b

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

0.4

0.11

0.15

173

3.8

= 10 V, V = 4.5 V

^ 0.25 A

d(on)

Turn-On Time

Turn-Off Time

= 30 V, R = 150 W

4.8

^^ 0.2 A, V

= 10V

GEN

= 10 W

12.8

9.6

d(off)

Notes

a. Pulse test: PW v300 ms duty cycle v2%.

b. Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics

Transfer Characteristics

1.0

1.2

0.9

0.6

6 V

T = −55_C

= 10, 7 V

5 V

0.8

0.6

0.4

0.2

0.0

25_C

125_C

4 V

3 V

0.3

− Drain-to-Source Voltage (V)

− Gate-to-Source Voltage (V)

Document Number: 72705

S-40247—Rev. A, 16-Feb-04

www.vishay.com

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