是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | TO-92 | 包装说明: | CYLINDRICAL, O-PBCY-W3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.56 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 0.115 A |
最大漏源导通电阻: | 7.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 5 pF | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N7000L-T92-R | UTC |
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N-CHANNEL ENHANCEMENT MODE | |
2N7000LTR | VISHAY |
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Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
2N7000LTR1 | VISHAY |
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Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
2N7000NOPTION2 | CALOGIC |
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Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
2N7000P | ETC |
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N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
2N7000P001 | SUPERTEX |
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Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
2N7000P002 | SUPERTEX |
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Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
2N7000P003-G | SUPERTEX |
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Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
2N7000P006 | SUPERTEX |
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Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
2N7000P007 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal |