Datasheet > 2N7000P013

2N7000P013

更新时间： 2024-01-30 01:40:02

品牌	Logo	应用领域
超科 - SUPERTEX		开关晶体管
页数	文件大小	规格书
4页	35K
描述
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

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2N7000P013 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	CYLINDRICAL, O-PBCY-T3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.21.00.95
风险等级：	5.62	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V	最大漏极电流 (ID)：	0.2 A
最大漏源导通电阻：	5 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	5 pF	JEDEC-95代码：	TO-92
JESD-30 代码：	O-PBCY-T3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	CYLINDRICAL	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	NO	端子面层：	TIN LEAD
端子形式：	THROUGH-HOLE	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

2N7000P013 数据手册

2N7000

N-Channel Enhancement-Mode

Vertical DMOS FET

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

I_D(ON)

BV_DGS

(max)

(min)

TO-92

60V

5.0Ω

75mA

2N7000

Features

Advanced DMOS Technology

❏ Free from secondary breakdown

❏ Low power drive requirement

❏ Ease of paralleling

These enhancement-mode (normally-off) transistors utilize a

verticalDMOSstructureandSupertex’swell-provensilicon-gate

manufacturingprocess.Thiscombinationproducesdeviceswith

thepowerhandlingcapabilitiesofbipolartransistorsandwiththe

highinput impedanceandpositivetemperaturecoefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

❏ Low C_ISSand fast switching speeds

❏ Excellent thermal stability

❏ Integral Source-Drain diode

❏ High input impedance and high gain

Supertex’s vertical DMOS FETs are ideally suited to a wide

rangeofswitchingandamplifyingapplicationswherehighbreak-

down voltage, high input impedance, low input capacitance, and

fast switching speeds are desired.

❏ Complementary N- and P-channel devices

Applications

❏ Motor controls

Package Option

❏ Converters

❏ Amplifiers

❏ Switches

❏ Power supply circuits

❏ Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Absolute Maximum Ratings

Drain-to-Source Voltage

BV_DSS

BV_DGS

± 30V

S G D

Drain-to-Gate Voltage

Gate-to-Source Voltage

TO-92

Operating and Storage Temperature

Soldering Temperature*

-55°C to +150°C

300°C

* Distance of 1.6 mm from case for 10 seconds.

Note: See Package Outline section for dimensions.

01/06/03

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

12 3 4

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