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2N7000TA PDF预览

2N7000TA

更新时间: 2024-11-17 22:12:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
3页 86K
描述
Advanced Small Signal MOSFET

2N7000TA 数据手册

 浏览型号2N7000TA的Datasheet PDF文件第2页浏览型号2N7000TA的Datasheet PDF文件第3页 
2N7000BU/2N7000TA  
Advanced Small Signal MOSFET  
FEATURES  
BVDSS = 60 V  
RDS(on) = 5.0 Ω  
ID = 200 mA  
n Fast Switching Times  
n Improved Inductive Ruggedness  
n Lower Input Capacitance  
n Extended Safe Operating Area  
n Improved High Temperature Reliability  
TO-92  
1.Source 2. Gate 3. Drain  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Drain-to-Source Voltage  
Value  
60  
Units  
VDSS  
V
Continuous Drain Current (TC=25)  
Continuous Drain Current (TC=100)  
Drain Current-Pulsed  
200  
110  
1000  
±30  
400  
3.2  
mA  
ID  
IDM  
mA  
V
VGS  
Gate-to-Source Voltage  
Total Power Dissipation (TC=25)  
Linear Derating Factor  
mW  
PD  
TJ , TSTG  
TL  
mW/℃  
Operating Junction and  
- 55 to +150  
300  
Storage Temperature Range  
Maximum Lead Temp. for Soldering  
Purposes, 1/8? from case for 5-seconds  
Thermal Resistance  
Symbol  
Characteristic  
Junction-to-Ambient  
Typ.  
--  
Max.  
Units  
/W  
RθJA  
312.5  
Rev. B  

2N7000TA 替代型号

型号 品牌 替代类型 描述 数据表
2N7000_D26Z FAIRCHILD

类似代替

N-Channel Enhancement Mode Field Effect Transistor, 3LD, TO-92, MOLDED, 0.200 IN LINE SPAC
2N7000BU FAIRCHILD

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Advanced Small Signal MOSFET
2N7000 FAIRCHILD

类似代替

N-Channel Enhancement Mode Field Effect Transistor

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